STMicroelectronics, a global leader in semiconductors, has announced a new power MOSFET high current, designed specifically for the automotive benefits from the latest optimization technology company STripFET to achieve a very low resistance. STD95N04 model is a 40 V DPAK device with an Rds (on) max of 6.5 my ©.
The new device 80 A is designed for applications DC-DC converters, motor control, solenoid drivers and ABS systems. The STD95N04 is extremely competitive in price and performance-ON resistance as compared to other conventional products made ~ trench ™ technology. The Rds (on) typical stands at 5 ml © and maintains the requirement to drive standard limit.
The STD95N04 rating is compatible with the AEC Q101 Stress Test for discrete semiconductors, the standard set by the Technical Committee of the AEC (Automotive Electronics Council) for components used in the automotive environment.
STripFET ST's new technology is based on increased cell density, leading to a reduction in on-resistance and losses, and using less silicon area. Other power MOSFETs in the process of developing the same technology used to meet the requirements DPAK (30 V, logic level, 4.5 mi © to 4.5 V) and DPAK2 (40 V, Standard level 2mi © to 10 V).
The STD95N04 encapsulated available in DPAK and TO-220.
Yoseph BUITRAGO 18257871 ESS SECTION 2 CI
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