STMicroelectronics introduced recently its new line of power MOSFET transistors, constructed using the second generation MDmesh technology (Multiple Drain Mesh), owned by the company.
ST said the new devices were developed to be used, among other applications, switched power supplies, system power factor correction and power adapters, because they reduce consumption substantially power, compared to the first generation MDmesh.
An example of this performance, ST said the MOSFET, STP25NM60N, a device 600V, offers a fuel efficiency of 98% energy, delivering a load power of 250Watts.
One member of this family, has an efficiency of 98% to 23Voltios AC with an output power of 250Watts, the company as an example.
The second generation MDmesh technology includes an innovative drainage structure, implemented as an array of partitions with vertical strips of p-type material, lined with strips n-type source.
This new structure results in a 40% reduction in on resistance (RON), causing in turn a significant reduction in power consumption of the transistor.
addition to this reduction in power losses, the new MOSFET manage to have lower switching losses, through better control of the device intrinsic capacitances.
Another feature of this new architecture is the ability to handle higher currents at lower voltages VGS used in control devices, said ST.
The new family of MOSFETs includes 4 devices for 500 volts and 140mOhm, 4 and 4 500V 380mOhm 170mOhm 600Vy over all available in different versions packaged in TO-247, TO-220 , TO-220FP and D2PAK/I2PAK .
Yoseph BUITRAGO 18257871 ESS SECTION 2 CI
0 comments:
Post a Comment