Friday, June 25, 2010

Should A Thai Curry Be Watery?

MESFET Transistor IGBT High electron mobility transistor


El transistor bipolar de puerta aislada (IGBT, del inglés Insulated Gate Bipolar Transistor) is a semiconductor device is usually applied as a switch controlled power electronics circuits.

This device has the characteristics of the signals of gate field effect transistors with high current capacity and low saturation voltage bipolar transistor, combining an insulated gate FET for the control input and a bipolar transistor as a switch in one device. The IGBT driver circuit is like the MOSFET, while the driving characteristics are as those of the BJT.

The
IGBTs have allowed developments that had not been feasible until then, particularly in the frequency inverters as well as applications in electric machines and power converters that are with us every day and everywhere, without us being particularly aware of that: car, train, metro, bus, airplane, boat, lift, electrical appliances, television, home automation, Uninterruptible Power Supply or UPS (UPS English, etc.).
more extended
IGBT Symbol: Gate or gate (G), collector (C) and emitter (E).

Features

The IGBT is suitable for switching speeds up to 20 KHz and has replaced the BJT in many applications. It is used in applications such as high and medium power switching power supply, traction control and engine induction cooker. Large IGBT modules consist of many devices placed in parallel can handle high currents of the order of hundreds of amps with blocking voltages of 6,000 volts.
the IGBT can be conceived as a hybrid Darlington transistor. Has the power handling capability of a bipolar but does not require the base current to keep driving. However, the transient currents based switching can be equally high. In power electronics applications is intermediate between the thyristors and mosfet. Handles more power than the latter being slower than them and the reverse on the first.
This is a switching device for high voltage systems. The gate control voltage is 15 V. This offers the advantage of controlling power systems using an electrical input signal very weak at the door.


Yoseph BUITRAGO SECTION 2 SSE 18257871 CI

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