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power CMOS Switched

It is an electrical or electronic device that lets you change the path to be followed by electrons. Are typical textbooks, like those used in homes and electrical devices, and those who have some electrical / electronic components as the relay. They resemble the switches in its external form, but both switches that disconnect a circuit connecting the other. Then describes the most common types of switches.

alternative switch

hotel also called switch or two neutral address. They are used wherever there to enable or disable a device from two different locations such as a lamp. In homes is typically found in classrooms or hallways.

crossing switch

Also known as reversing switch, this component is not installed never isolated, they should always be accompanied by alternative switches. Are, for example to turn on or off a lamp from three different points, for which we use two alternative switches and a crossover switch as shown in Fig. If the number of points on / off is more than three, will be inserted as many switches crossing points are provided between two alternative switches.

Márquez M. Winston J.

, CI. 16745566.

Subject CAF.

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CMOS (complementary metal English-oxide-semiconductor, "building-metal-oxide semiconductor complementary") is a logic families used in the manufacture integrated circuits (chips). Its main feature is the combined use of type pMOS transistors and nMOS type configured so that, at rest, the power consumption is only due to eddy currents.
Today, most integrated circuits are fabricated using CMOS technology. This includes memory chips, DSPs, and many other types of digital chips.

• When the input is 1, the nMOS transistor is in conducting state. To be its source connected to ground (0), 0 spreads to the drain and therefore the logic gate output. The pMOS transistor, however, is in a state of not driving
  
• When the input is 0, the pMOS transistor is in conducting state. To be its source connected to power (1), the value 1 is propagated to the drain and therefore the logic gate output. The nMOS transistor, however, is in a state of not driving.

Another important characteristics of CMOS circuits is that they are regenerative, a degraded signal to rush a CMOS logic gate will be restored to its original logic value 0 or 1, provided it is still within the noise margins that the circuit can tolerate.  

                        Márquez M. Wiston J.

                               CI. 16745566.

Subject: CAF.

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DNAFET

DNAFET

DNA field-effect transistor is a field effect transistor (or FET) using field effect generated by the partial charges of the DNA molecules to act as a biosensor. The structure of DNAFET is similar to that of the MOSFET, with the exception of the gate structure, in the DNAFET, is replaced by a layer of molecules of single strands of DNA that act as surface receptors. When complementary DNA strands hybridized receptors change the load distribution near the surface, which modulates the current transport through the semiconductor transducer.
chips can be used DNAFET to detect single nucleotide polymorphisms (which can cause various inherited diseases) and DNA sequencing. Its main advantage compared to optical detection methods commonly used today, is that they require the labeling of molecules. In addition, work continuously and (almost) in real time. The DNAFET are highly selective and specific binding only modulate the transport of cargo.

is a biosensor, an instrument for measuring biological and chemical parameters. Usually combine a component of a biological and a physical-chemical.
It consists of three parts:

• The biological sensor, can be a tissue, a culture of microorganisms, enzymes, antibodies, acid chains nucleic acids, etc. The sensor can be borrowed from nature or be a product of synthetic biology.
  
• The transducer: It connects the other two elements and translates the signal from the sensor.
  
• The detector: It can be optical, piezoelectric, thermal, magnetic, etc.

M. Marquez Winston J.

CI. 16745566.

Subject: CAF.

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IGBT

The IGBT is suitable for switching speeds up to 20 KHz and has replaced the BJT in many applications. It is used in applications such as high and medium power switching power supply, traction control and engine induction cooker. Large IGBT modules consist of many devices placed in parallel that can handle high currents of the order of hundreds of amps with blocking voltages of 6,000 volts.
the IGBT can be conceived as a hybrid Darlington transistor. Has the power handling capability of a bipolar but does not require the base current to keep driving. However, the switching transients from the base can be equally high. In power electronics applications is intermediate between the thyristors and mosfet. Handles more power than the latter being slower than them and the reverse on the first.



M. Marquez Winston J.

, CI. 16745566.

Subject: CAF.

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TFT

TFT, acronyms Thin Film Transistor (in English : Thin Film Transistor) is a special type of field-effect transistor which is fabricated by depositing thin films of semiconductor active and a layer of dielectric material and metal contacts on a base of support. A common substrate is glass . One of the first applications of TFTs are screen LCD.
The TFTs can be manufactured with a variety of semiconductor materials. The most common is silicon. The characteristics of silicon-based TFT depends on its crystalline state. That is, the semiconductor layer can be amorphous silicon, microcrystalline silicon or may have been tempered in a polysilicon. Other materials that can be used as semiconductors in TFTs are cadmium selenide (CdSe) and metal oxides such as zinc oxide. The TFTs can also be manufactured using organic materials (Organic TFT or OTFT).
Using semiconductors and transparent electrodes, such as Indium-Tin Oxide (ITO ) TF devices can be completely transparent.

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HEMT

5) HEMT
are The HEMT FET transistors, which replaces the channel driving a junction where you join two semiconductor materials with different gaps between conduction band and valence, which produces a very thin layer in which the Fermi level is slightly above the conduction band, on the other carriers are confined to a layer so narrow that they can describe as an electron gas in two dimensions. For these two reasons the charge carriers acquire a very high mobility and high saturation velocity, enabling them to react to varying fields at very high frequencies, and also very significantly reduces the effect of scattering atoms produced on the carrier doping redice load greatly that this device emits noise.
two semiconductor materials normally have the same crystal structure for an adequate fit between these, this in order to prevent the carriers being trapped in the discontinuities that might occur. Reducing performance.
A HEMT type in which this is not true, the pseudomorphic HEMT (PHEMT), as they put a very thin layer of a material, as this has been altered to fit with the other material. This accomplishes energy gaps much higher allowing better transistor performance.
Another way to achieve this is to insert a very thin layer of fit between the two materials so that this becomes the responsibility of uniting the two crystal structures, this presents an advantage when the layer is constructed with AlInAs adaptations In this material the concentration of In is a graduate of wedge shaped crystal structures, then you have a high concentration In place of high gain and low concentration produces low noise.

M. Marquez Winston J.

; CI. 16745566.

Subject: CAF.

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JFET MOSFET

field effect transistor junction is an electronic device, ie a circuit as electrical values input, reacts to give output values. In the case of the JFET, when field effect transistors power, these values \u200b\u200bare the input voltages, namely the voltage across S (source) and G (gate), V GS . According to this value, the output transistor will present a characteristic that it simplifies defining equations defined three areas: cutting, ohmic and saturation.
Physically, a JFET-called "channel P" consists of a piece of P-type semiconductor whose extremes are two output pins (sink and source) flanked by two regions with doping type N in which you connect two terminals connected to each other (door). By applying a positive voltage (in reverse) V GS between gate and source, the zones N paths created around areas in which the passage of electrons (current _I D) is cut, called zones. When the V GS exceeds a certain value, the exclusion zones extend to the point that the passage of electrons I _D between source and drain is completely cut. At that value of V GS is called V _p . For a JFET channel "N" p and n areas are reversed, and _{V and V GS} p are positive, cutting the current for voltages greater than V p .
Thus, according to the value of V GS first two zones are defined, an active negative voltages higher than V p (since p V is also negative) and a cutting zone to lower voltages that V p . The different values \u200b\u200bof R D according to the V GS are given by a graph or equation called the input equation.
active in the area, by allowing the passage of current, give an output transistor in the circuit itself is defined by I _D and voltage between drain and source V DS. A graph or equation relating these two variables is called the output equation, and it is where you distinguish the two active areas of operation: ohmic and saturation.



Marquez Mr. Winston J.

, CI. 16745566.

Subject CAF.

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3) Transistor MOSFET
A MOSFET transistor is a substrate of doped semiconductor material in which, by diffusion of doping techniques, creating two islands separated by opposite type an area on which grows a dielectric layer topped by a layer of conductor. MOSFET transistors are divided into two main types depending on how you made doping:

• nMOS Type: p-type substrate n-type diffusions

• pMOS type, substrate type and n-type diffusions p.

dissemination areas are called source (source) and drain (drain), and between them is the door (gate).
The MOSFET transistor has three operating states:

cutting State

When the gate voltage is identical to that of the substrate, the MOSFET is in a state of non-conduction: no current flows between source and drain while applying a potential difference between them. Also called the isolated mosfet junction of two components.

linear Driving

Al polarize the door with a negative voltage (pMOS) or positive (nMOS) creates a region of deplexing in the region separating the source and drain. If this stress becomes large enough, appear minority carriers (electrons in pMOS, nMOS voids) in the region deplexing that will result in a raceway. The transistor then passes conducting state, so that a potential difference between source and drain will result in a current. The transistor behaves as a resistance controlled by the gate voltage.

saturation tension When between drain and source exceeds a certain limit, the conduction channel under the door suffered a bottleneck in the vicinity of the drain and disappears. The current between source and drain is not interrupted, as it is due to the electric field between the two, but is independent of the potential difference between the two terminals.

Mathematical models

• For a type induced channel MOSFET in linear region n:

where in which b is the width of the channel, μ n the electron mobility, ε is the electric permittivity of the oxide layer, L the channel length and W the thickness of oxide layer.

• When the transistor operates in the saturation region, the formula becomes this:

These formulas are a simple model of operation of MOSFET transistors, but do not take into account a number of second-order effects, such as:

• speed Saturation: The relationship between gate voltage and drain current does not grow quadratically in short channel transistors.
  
• body Effect: The tension between source and substrate modifies the threshold voltage results in raceway
  
• channel length modulation.

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